Ignition Performance of SCB/Pb•BaTNR

Abstract Polysilicon thin-film semiconductor bridges (SCB) and Pb•BaTNR primary explosives are selected to prepare SCB/Pb•BaTNR samples, their ignition performance is tested. The test results show that the samples were ignited random when energy provided for SCB insufficient but aroud critical value. Under different energy-storage capacitance, voltages lead completely gasifying into high-energy plasma around 21V, indicating charging voltage main factor affecting elements produce plasma. Ignition tests performed on under conditions of 47μF/21V, 64μF/21V, 100μF/21V. found ignite reliably, action time ranges from 0.17 ms 0.4 ms, meeting requirements high instantaneity.